Diamond Schottky Barrier Diodes With Field Plate
نویسندگان
چکیده
منابع مشابه
AlGaN/GaN Schottky Barrier Diodes Employing Diamond-like Carbon passivation
AlGaN/GaN Schottky Barrier Diodes (SBDs) employing the Diamond-like Carbon (DLC) passivation was proposed. The reverse blocking characteristics of the AlGaN/GaN SBD is degraded by the electron trapping effect through the surface trap states. In order to suppress the electron trapping effect and increase the breakdown voltage of AlGaN/GaN SBDs, the surface passivation or treatment should be perf...
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ژورنال
عنوان ژورنال: The Transactions of The Korean Institute of Electrical Engineers
سال: 2017
ISSN: 1975-8359
DOI: 10.5370/kiee.2017.66.4.659